K. Tomizawa

Monte Carlo simulation of AlGaAs/GaAs heterojunction bipolar transistors

K. Tomizawa, Yuji Awano, N. Hashizume · IEEE Electron Device Letters · 1984 · 69 citations

Engineering, Electrical Engineering, Materials Science +17

A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

A. Abramo, L. Baudry, R. Brunetti et al. · IEEE Transactions on Electron Devices · 1994 · 69 citations · Full text

Engineering, Electrical Engineering, Physics +15

Growth of Low Dislocation Density GaAs by As Pressure‐Controlled Czochralski Method

K. Tomizawa, K. Sassa, Y. Shimanuki et al. · Journal of The Electrochemical Society · 1984 · 47 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Monte Carlo particle simulation of a GaAs short-channel MESFET

Yuji Awano, K. Tomizawa, N. Hashizume et al. · Electronics Letters · 1983 · 39 citations

Engineering, Electrical Engineering, Microelectronics +16

Breakdown-speed considerations in InP/InGaAs single- and double-heterostructure bipolar transistors

Hin-Fai Chau, D. Pavlidis, Jonathan Hu et al. · IEEE Transactions on Electron Devices · 1993 · 38 citations

Engineering, Electrical Engineering, Physics +17