Hin-Fai Chau

The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors

W. Liu, A. Khatibzadeh, J. Sweder et al. · IEEE Transactions on Electron Devices · 1996 · 108 citations

Electrical Engineering, Engineering, Base-ballasted Hbts +9

Thermal properties and thermal instabilities of InP-based heterojunction bipolar transistors

W. Liu, Hin-Fai Chau, Edward Beam · IEEE Transactions on Electron Devices · 1996 · 67 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x<0.53) HEMTs

Geok Ing Ng, D. Pavlidis, M. Jaffé et al. · IEEE Transactions on Electron Devices · 1989 · 60 citations

Materials Engineering, Experimental Characteristics, Electrical Engineering +14

Characterization of bias-stressed carbon-doped GaAs/AlGaAs power heterojunction bipolar transistors

T. Henderson, D. Hill, W. Liu et al. · 2002 · 40 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +8

Breakdown-speed considerations in InP/InGaAs single- and double-heterostructure bipolar transistors

Hin-Fai Chau, D. Pavlidis, Jonathan Hu et al. · IEEE Transactions on Electron Devices · 1993 · 38 citations

Electrical Engineering, Engineering, Speed-breakdown Tradeoffs +9