J. Sweder

The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors

W. Liu, A. Khatibzadeh, J. Sweder et al. · IEEE Transactions on Electron Devices · 1996 · 108 citations

Electrical Engineering, Engineering, Base-ballasted Hbts +9

High-efficiency X-band HBT power amplifier

A. Khatibzadeh, W. Liu, T. Henderson et al. · 2002 · 31 citations

Electrical Engineering, Engineering, Rf Semiconductor +9

Laterally etched undercut (LEU) technique to reduce base-collector capacitances in heterojunction bipolar transistors

W. Liu, D. Hill, Hin-Fai Chau et al. · 2002 · 15 citations

Electrical Engineering, Engineering, Parasitic Junction Capacitance +11

First demonstration of high-power GaInP/GaAs HBT MMIC power amplifier with 9.9 W output power at X-band

W. Liu, A. Khatibzadeh, Tae Kim et al. · IEEE Microwave and Guided Wave Letters · 1994 · 14 citations

Microwave Circuits, Electrical Engineering, Gainp/gaas Hbt +13