W. Liu

Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densities

W. Liu, S. Nelson, D. Hill et al. · IEEE Transactions on Electron Devices · 1993 · 166 citations

Thermal Phenomenon, Electrical Engineering, Engineering +11

RF MOSFET modeling accounting for distributed substrate and channel resistances with emphasis on the BSIM3v3 SPICE model

W. Liu, Ranjit Gharpurey, Meng‐Chou Chang et al. · 2002 · 113 citations

Channel Resistances, Engineering, Vlsi Design +18

The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors

W. Liu, A. Khatibzadeh, J. Sweder et al. · IEEE Transactions on Electron Devices · 1996 · 108 citations

Electrical Engineering, Engineering, Base-ballasted Hbts +9

The collapse of current gain in multi-finger heterojunction bipolar transistors: its substrate temperature dependence, instability criteria, and modeling

W. Liu, A. Khatibzadeh · IEEE Transactions on Electron Devices · 1994 · 97 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +11

Temperature dependences of current gains in GaInP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors

W. Liu, Shou-Kong Fan, T. Henderson et al. · IEEE Transactions on Electron Devices · 1993 · 75 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10