Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x<0.53) HEMTs

Geok Ing Ng, D. Pavlidis, M. Jaffé, +2

IEEE Transactions on Electron Devices

Materials EngineeringExperimental CharacteristicsElectrical EngineeringWide-bandgap SemiconductorEngineering +12

Iterative Assembly of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msup><mml:mi/><mml:mn>171</mml:mn></mml:msup></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Yb</mml:mi></mml:math> Atom Arrays with Cavity-Enhanced Optical Lattices

Matthew A. Norcia, Hyosim Kim, William B. Cairncross, +47

PRX Quantum

The evolution of IBM CMOS DRAM technology

E.L. Adler, J. DeBrosse, Steven J. Holmes, +11

IBM Journal of Research and Development

Hardware SecurityElectrical EngineeringEngineeringDram Retention TimeAdvanced Packaging (Semiconductors) +12

Theoretical studies of optical modulation in lattice matched and strained quantum wells due to transverse electric fields

Song Cheol Hong, M. Jaffé, J. Singh

IEEE Journal of Quantum Electronics

Quantum SciencePhotonicsEngineeringPhysicsOptical Properties +12

In-plane hole effective masses in In<i>x</i>Ga1−<i>x</i>As/Al0.15Ga0.85As modulation-doped heterostructures

M. Jaffé, J. E. Oh, J. Pamulapati, +2

Applied Physics Letters

Oxide HeterostructuresMaterials ScienceWide-bandgap SemiconductorStrain DependenceEngineering +9

Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties

Geok Ing Ng, D. Pavlidis, M. Quillec, +3

Applied Physics Letters

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringActive ChannelTransconductance Enhancement +11

Inclusion of spin-orbit coupling into tight binding bandstructure calculations for bulk and superlattice semiconductors

M. Jaffé, J. Singh

Solid State Communications

Materials ScienceSpin-orbit EffectsSpintronicsSemiconductorsBandstructure Calculations +12

High-Fidelity Universal Gates in the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msup><mml:mi/><mml:mn>171</mml:mn></mml:msup></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>Yb</mml:mi></mml:math> Ground-State Nuclear-Spin Qubit

Juan A. Muniz, M. B. Stone, D. T. Stack, +50

PRX Quantum

CMOS Imager with Copper Wiring and Lightpipe

Jeff Gambino, B. Leidy, J. Adkisson, +8

EngineeringMicro-optical ComponentImage SensorPhotoelectric SensorPolymer Lightpipe +14

A comparison of the electronic properties of thin-period (InAs)(GaAs) and (InAs)(AlAs) superlattices with compositionally similar random alloys

M. Jaffé, J. Singh

IEEE Transactions on Electron Devices