M. Jaffé

Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x<0.53) HEMTs

Geok Ing Ng, D. Pavlidis, M. Jaffé et al. · IEEE Transactions on Electron Devices · 1989 · 60 citations

Materials Engineering, Experimental Characteristics, Electrical Engineering +14

Iterative Assembly of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msup><mml:mi/><mml:mn>171</mml:mn></mml:msup></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Yb</mml:mi></mml:math> Atom Arrays with Cavity-Enhanced Optical Lattices

Matthew A. Norcia, Hyosim Kim, William B. Cairncross et al. · PRX Quantum · 2024 · 58 citations · Full text

The evolution of IBM CMOS DRAM technology

E.L. Adler, J. DeBrosse, Steven J. Holmes et al. · IBM Journal of Research and Development · 1995 · 51 citations

Hardware Security, Electrical Engineering, Engineering +14

Theoretical studies of optical modulation in lattice matched and strained quantum wells due to transverse electric fields

Song Cheol Hong, M. Jaffé, J. Singh · IEEE Journal of Quantum Electronics · 1987 · 39 citations

Quantum Science, Photonics, Engineering +14

In-plane hole effective masses in In<i>x</i>Ga1−<i>x</i>As/Al0.15Ga0.85As modulation-doped heterostructures

M. Jaffé, J. E. Oh, J. Pamulapati et al. · Applied Physics Letters · 1989 · 28 citations · Full text

Oxide Heterostructures, Materials Science, Wide-bandgap Semiconductor +11