Challenges and future directions for the scaling of dynamic random-access memory (DRAM)

J. Mandelman, R.H. Dennard, G. Bronner, +4

IBM Journal of Research and Development

Non-volatile MemoryEngineeringDynamic Random-access MemoryEmerging Memory TechnologyComputer Architecture +14

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

Tai Min, Qiang Chen, R. S. Beach, +14

IEEE Transactions on Magnetics

Non-volatile MemoryEngineeringEmerging Memory TechnologyMagnetic ResonanceComputer Architecture +18

Design considerations for MRAM

T. Maffitt, J. DeBrosse, John Gabric, +6

IBM Journal of Research and Development

Hardware SecuritySpintronicsMagnetismElectrical EngineeringEngineering +13

A High-Speed 128-kb MRAM Core for Future Universal Memory Applications

J. DeBrosse, D. Gogl, Ann-Christin Bette, +12

IEEE Journal of Solid-State Circuits

Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringComputer Engineering +12

A 14 nm Embedded STT-MRAM CMOS Technology

D. Edelstein, Michael Rizzolo, Devika Sil, +38

Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureMagnetism +14

A new planarization technique, using a combination of RIE and chemical mechanical polish (CMP)

B. Davarik, Charles W. Koburger, R. Schulz, +8

EngineeringEmerging Memory TechnologyMechanical EngineeringIntegrated CircuitsChemical Engineering +20

The evolution of IBM CMOS DRAM technology

E.L. Adler, J. DeBrosse, Steven J. Holmes, +11

IBM Journal of Research and Development

Hardware SecurityElectrical EngineeringEngineeringDram Retention TimeAdvanced Packaging (Semiconductors) +12

A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)

R. S. Beach, Tai Min, C. Horng, +32

EngineeringSpintronic MaterialSpin DynamicSpin PhenomenonMagnetoresistance +14

A 16-Mb MRAM featuring bootstrapped write drivers

D. Gogl, Christine Arndt, J.C. Barwin, +17

IEEE Journal of Solid-State Circuits

Hardware SecuritySpintronicsElectrical Engineering16-Mb Mram FeaturingMulti-mb Mram Design +11

Fault-tolerant designs for 256 Mb DRAM

T. Kirihata, Yoshihiro Watanabe, Hing Wong, +8

IEEE Journal of Solid-State Circuits

Hardware SecurityElectrical EngineeringEngineeringVlsi DesignHardware Reliability +11