Growth of Low Dislocation Density GaAs by As Pressure‐Controlled Czochralski Method

Abstract

A new growth technique of the low dislocation density crystals is described. The ambient As vapor pressure was controlled through precise control of temperature in a quartz chamber in which a crystal was grown by the Czochralski method. The dislocation density in the undoped crystals (2''φ. <111>) was as low as , which was lower than the case of the commercial LEC method by a factor of ten. The origin of such a pronounced reduction of the dislocation density is discussed by taking into account the effects of the melt stoichiometry and the thermal stress exerted on the grown crystal.