Electronics Letters · 2005 · 12 citations · 9 references
EngineeringElectrical EngineeringMicrowave EngineeringSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave OscillatorsMicrowave ResonatorsMicrowave Semiconductor DevicesOscillatorsCavity Resonator OscillatorsGaas OscillatorsMicrowave CavitiesMicrowave DevicesMolecular Beam EpitaxyPower OutputRadio-frequency DevicesResonant Cavities
GaAs TUNNET diodes fabricated with molecular layer epitaxy oscillated in metal rectangular resonant WR-2.2 cavities in fundamental mode are reported. Continuous-wave frequency was tuned in the range 290–393 GHz with bias current from 320 to 460 mA. Output power was −42 dBm at 393 GHz.
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Tunable terahertz wave generation in the 3- to 7-THz region from GaP
Tadao Tanabe, K. Sütö, Jun‐ichi Nishizawa et al. · Applied Physics Letters · 2003 · 216 citations · Full text
Transform-limited, narrow-linewidth, terahertz-wave parametric generator
Kodo Kawase, Jun-ichi Shikata, Kazuhiro Imai et al. · Applied Physics Letters · 2001 · 155 citations
H. Eisele, Anders Rydberg, G.I. Haddad · IEEE Transactions on Microwave Theory and Techniques · 2000 · 117 citations
Engineering, Electrical Engineering, Microwave Engineering +15