290–393 GHz CW fundamental-mode oscillation from GaAs TUNNETT diode

Abstract

GaAs TUNNET diodes fabricated with molecular layer epitaxy oscillated in metal rectangular resonant WR-2.2 cavities in fundamental mode are reported. Continuous-wave frequency was tuned in the range 290–393 GHz with bias current from 320 to 460 mA. Output power was −42 dBm at 393 GHz.