Riad Kabouche

High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation

Kathia Harrouche, Riad Kabouche, Étienne Okada et al. · IEEE Journal of the Electron Devices Society · 2019 · 108 citations · Full text

Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3

E. Chikoidze, Tamar Tchelidze, Corinne Sartel et al. · Materials Today Physics · 2020 · 46 citations · Full text

Materials Science, Electrical Engineering, Engineering +7

Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors

Jun Lu, Jr‐Tai Chen, Martin Dahlqvist et al. · Applied Physics Letters · 2019 · 38 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +15

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

Idriss Abid, Riad Kabouche, Catherine Bougerol et al. · Micromachines · 2019 · 36 citations · Full text

Aln/sapphire Templates, Aluminium Nitride, Electrical Engineering +10

InAlGaN/GaN HEMTs at Cryogenic Temperatures

Ezgi Dogmus, Riad Kabouche, Sylvie Lépilliet et al. · Electronics · 2016 · 31 citations · Full text

Materials Engineering, Semiconductors, Electrical Engineering +15