Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3 - Concepedia

Concepedia

Publication | Open Access

Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3

DOI Full Paper Access

46

Citations

42

References

2020

Year

E. Chikoidze, Tamar Tchelidze, Corinne Sartel, Zeyu Chi, Riad Kabouche, Ismail Madaci, Carlos García-Rubio, Hagar Mohamed, Vincent Sallet, Farid Medjdoub,

Materials Today Physics

Materials ScienceElectrical EngineeringEngineeringOxide ElectronicsCondensed Matter PhysicsQuantum MaterialsSuperconductivityApplied PhysicsGallium OxideZn-doped P-type β-Ga2o3

References

	Year	Citations

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