P-type Doping

P-Type Doping is a semiconductor engineering process in which acceptor impurities are introduced into a crystalline lattice to create an excess of positively charged holes as the majority charge carriers.

2.4K

Publications

154.9K

Citations

10.4K

Authors

1.7K

Institutions

Publications per year

2017–2026

637

Authors

10.4K

  1. SW
    Su‐Huai Wei

    National Laboratory of the Rockies, United States

    25 publications · 6.2K citations

    21

    h-index

  2. CG
    Chris G. Van de Walle

    University of California, Santa Barbara, United States

    18 publications · 2.1K citations

    17

    h-index

  3. SJ
    S. J. Pearton

    University of Florida, United States

    20 publications · 1.7K citations

    16

    h-index

  4. SZ
    Shengbai Zhang

    Rensselaer Polytechnic Institute, United States

    12 publications · 5.6K citations

    12

    h-index

  5. FR
    F. Ren

    University of Florida, United States

    12 publications · 484 citations

    12

    h-index

1–5 of 10.4K

Venues

  1. Applied Physics Letters

    408 publications · 25.8K citations

    82

    h-index

  2. Journal of Applied Physics

    214 publications · 9.9K citations

    50

    h-index

  3. Nano Letters

    36 publications · 6.1K citations

    32

    h-index

  4. Physical review. B, Condensed matter

    PRB · 48 publications · 6.5K citations

    30

    h-index

  5. The Journal of Physical Chemistry C

    61 publications · 3.5K citations

    30

    h-index

1–5