P-type Doping
P-Type Doping is a semiconductor engineering process in which acceptor impurities are introduced into a crystalline lattice to create an excess of positively charged holes as the majority charge carriers.
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154.9K
Citations
10.4K
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1.7K
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Publications per year
2017–2026
637
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2.4K
Black phosphorus field-effect transistors
Likai Li, Yijun Yu, Guo Jun Ye et al. · Nature Nanotechnology · 2014 · 8.4K citations · Full text
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University of California, Santa Barbara, United States
18 publications · 2.1K citations
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1.7K

Chinese Academy of Sciences
Beijing, China
38 h-index
358 publications
24.1K citations

National Laboratory of the Rockies
Golden, United States
33 h-index
189 publications
27.2K citations

Centre National de la Recherche Scientifique
Paris, France
29 h-index
323 publications
10.5K citations
Tokyo Institute of Technology
Tokyo, Japan
26 h-index
159 publications
9.5K citations
University of Illinois Urbana-Champaign
Urbana, United States
23 h-index
126 publications
8.4K citations
Sungkyunkwan University
Seoul, South Korea
23 h-index
186 publications
13.9K citations
University of California, Santa Barbara
Santa Barbara, United States
23 h-index
122 publications
9.9K citations

Peking University
Beijing, China
22 h-index
166 publications
14.1K citations
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408 publications · 25.8K citations
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214 publications · 9.9K citations
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36 publications · 6.1K citations
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PRB · 48 publications · 6.5K citations
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61 publications · 3.5K citations
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