N. Sarazin

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

N. Sarazin, E. Morvan, M.A. Poisson et al. · IEEE Electron Device Letters · 2009 · 121 citations

High-frequency High-electron-mobility Transistors, Electrical Engineering, Alinn/aln/gan Hemt Technology +12

Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

W. Chikhaoui, Jean‐Marie Bluet, M. A. Poisson et al. · Applied Physics Letters · 2010 · 84 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +12

43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC amplifiers

S. Piotrowicz, Z. Ouarch, E. Chartier et al. · 2010 IEEE MTT-S International Microwave Symposium · 2010 · 47 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

A new nonlinear HEMT model for AlGaN/GaN switch applications

Olivier Jardel, Guillaume Callet, C. Charbonniaud et al. · European Microwave Integrated Circuits Conference · 2009 · 23 citations

Device Modeling, Electrical Engineering, Engineering +11

A 30W, 46% PAE S-band GaN HEMT MMIC power amplifier for radar applications

Olivier Jardel, Maxime Olivier, D. Lancereau et al. · 2012 · 17 citations

Electrical Engineering, Transistor Performances, Engineering +8