Olivier Jardel

An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR

Olivier Jardel, Fabien de Groote, Tibault Reveyrand et al. · IEEE Transactions on Microwave Theory and Techniques · 2007 · 289 citations

Wide-bandgap Semiconductor, Large-signal Electrothermal Model, Electrical Engineering +14

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

N. Sarazin, E. Morvan, M.A. Poisson et al. · IEEE Electron Device Letters · 2009 · 121 citations

High-frequency High-electron-mobility Transistors, Electrical Engineering, Alinn/aln/gan Hemt Technology +12

ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT

R. Aubry, J. Jacquet, M. Oualli et al. · IEEE Electron Device Letters · 2016 · 58 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

A Drain-Lag Model for AlGaN/GaN Power HEMTs

Olivier Jardel, Fabien de Groote, C. Charbonniaud et al. · IEEE MTT-S International Microwave Symposium digest · 2007 · 51 citations

Device Modeling, Electrical Engineering, Engineering +11

Thermal Characterization Using Optical Methods of AlGaN/GaN HEMTs on SiC Substrate in RF Operating Conditions

Lény Baczkowski, Jean-Claude Jacquet, Olivier Jardel et al. · IEEE Transactions on Electron Devices · 2015 · 50 citations

Wide-bandgap Semiconductor, Engineering, Rf Semiconductor +17