M. Oualli

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

N. Sarazin, E. Morvan, M.A. Poisson et al. · IEEE Electron Device Letters · 2009 · 121 citations

High-frequency High-electron-mobility Transistors, Electrical Engineering, Alinn/aln/gan Hemt Technology +12

Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs

Michele Piazza, C. Dua, M. Oualli et al. · Microelectronics Reliability · 2009 · 63 citations

Materials Science, Wide-bandgap Semiconductor, Gan Hemts +5

ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT

R. Aubry, J. Jacquet, M. Oualli et al. · IEEE Electron Device Letters · 2016 · 58 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs

Ana Curutchet, C. Sury, Virginie Hoel et al. · Microelectronics Reliability · 2009 · 22 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Electrical Engineering +8

Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

Olivier Jardel, Guillaume Callet, Jérémy Dufraisse et al. · International Journal of Microwave and Wireless Technologies · 2011 · 21 citations

Continuous Wave, Wide-bandgap Semiconductor, Electrical Engineering +15