D. Lancereau

ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT

R. Aubry, J. Jacquet, M. Oualli et al. · IEEE Electron Device Letters · 2016 · 58 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers

S. Piotrowicz, E. Morvan, R. Aubry et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 2008 · 33 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

A 30W, 46% PAE S-band GaN HEMT MMIC power amplifier for radar applications

Olivier Jardel, Maxime Olivier, D. Lancereau et al. · 2012 · 17 citations

Electrical Engineering, Transistor Performances, Engineering +8

InAlN/GaN HEMTs based L-band high-power packaged amplifiers

Olivier Jardel, Jean-Claude Jacquet, Lény Baczkowski et al. · International Journal of Microwave and Wireless Technologies · 2014 · 12 citations

Wide-bandgap Semiconductor, Engineering, Power Electronic Systems +16

Broadband AlGaN/GaN high power amplifiers, robust LNAs, and power switches in L-band

S. Piotrowicz, B. Mallet-Guy, E. Chartier et al. · 2009 · 11 citations

Wide-bandgap Semiconductor, Power Switches, Electrical Engineering +10