J. Krynicki

Laser annealing of arsenic implanted silicon

J. Krynicki, J. Suski, S. Ugniewski et al. · Physics Letters A · 1977 · 51 citations

Materials Science, Arsenic Implanted Silicon, Engineering +4

Defects in epitaxial Si-doped GaInP

J. Krynicki, M. A. Zaïdi, M. Zazoui et al. · Journal of Applied Physics · 1993 · 37 citations

Semiconductors, Semiconductor Technology, Epitaxial Growth +14

Boron concentration and impurity-to-band activation energy in diamond

J. C. Bourgoin, J. Krynicki, B. Blanchard · physica status solidi (a) · 1979 · 31 citations

Band offset of GaAs-GaInP heterojunctions

Shipeng Feng, J. Krynicki, V. Donchev et al. · Semiconductor Science and Technology · 1993 · 29 citations

Electrical Engineering, N+-gaas/n-gainp Lattice-matched Heterostructures, Photoluminescence Excitation +10

Defect annealing in phosphorus implanted silicon: A D.L.T.S. study

J. Krynicki, J. C. Bourgoin · Applied Physics A · 1979 · 17 citations

Materials Science, Engineering, Applied Physics +4