B. Blanchard

Microstructure of silicon implanted with high dose oxygen ions

C. Jaussaud, J. Stoëmenos, J. Margail et al. · Applied Physics Letters · 1985 · 92 citations

Materials Science, Oxide Heterostructures, Heat Treatment +14

Redistribution of boron in silicon after high−temperature proton irradiation

P. Baruch, J. Monnier, B. Blanchard et al. · Applied Physics Letters · 1975 · 39 citations

Proton Range, Ion Implantation, Experimental Nuclear Physics +13

Boron concentration and impurity-to-band activation energy in diamond

J. C. Bourgoin, J. Krynicki, B. Blanchard · physica status solidi (a) · 1979 · 31 citations

Self-interstitial mechanism for Zn diffusion-induced disordering of GaAs/Al<i>x</i>Ga1−<i>x</i>As (<i>x</i>=0.1−1) multiple-quantum-well structures

Nguyen Hong Ky, J.-D. Ganière, M. Gailhanou et al. · Journal of Applied Physics · 1993 · 26 citations · Full text

Engineering, Multiple-quantum-well Structures, Semiconductor Nanostructures +16

Infrared spectroscopic ellipsometry for residual water detection in annealed sol–gel thin layers

S. Bruynooghe, F. Bertin, Amal Chabli et al. · Thin Solid Films · 1998 · 24 citations

Residual Water Detection, Infrared Spectroscopic Ellipsometry, Engineering +11