J. Stoëmenos - Concepedia

Author

J. Stoëmenos

Aristotle University of Thessaloniki

Also Known As

J Stoemenos, J. STOEMENOS, J. Stoemenos, J. Stoemenos,, J. Stoëmenos, John Stoemenos

238

Publications

3.9K

Citations

H-Index

Concepts

All Affiliations

Aristotle University of Thessaloniki Helmholtz-Zentrum Dresden-Rossendorf Hungarian Academy of Sciences Institute for Technical Physics and Materials Science University of Surrey

About

J. Stoëmenos is an author at Aristotle University of Thessaloniki specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	33	90	3.3K
2	Applied Physics	31	82	3K
3	Chemical Engineering	3	3	85
4	Natural Sciences	1	1	19
5	Biomedical Engineering	1	1	79

J. Stoëmenos

Publications

3.4K

Citations

H-Index

Page 1

	Year	Citations
Excimer laser annealing of amorphous and solid-phase-crystallized silicon films Mitsutoshi Miyasaka, J. Stoëmenos Journal of Applied Physics Optical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsThin Film Process Technology	1999	182
Amorphization and recrystallization of 6H-SiC by ion-beam irradiation V. Heera, J. Stoëmenos, R. Kögler, Journal of Applied Physics Materials ScienceMaterials EngineeringIon ImplantationEpitaxial GrowthEngineering	1995	156
Mode of growth and microstructure of polycrystalline silicon obtained by solid-phase crystallization of an amorphous silicon film L. Haji, Pierre-Yves Joubert, J. Stoëmenos, Journal of Applied Physics Solid-phase CrystallizationEngineeringPreferred OrientationCrystal Growth TechnologyAmorphous Silicon Film	1994	139
Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si+ implantation and annealing E. Kapetanakis, P. Normand, D. Tsoukalas, Applied Physics Letters EngineeringThin Sio2 OxidesSi FluenceIntegrated CircuitsSilicon On Insulator	2000	138
Structural studies of MoS2 intercalated by lithium K. Chrissafis, M. Zamani, K. Kambas, Materials Science and Engineering B Materials ScienceInorganic ChemistryTransition Metal ChalcogenidesEngineeringLayered Material	1989	102
Structural studies of low-temperature low-pressure chemical deposited polycrystalline silicon D. Meakin, J. Stoëmenos, P. Migliorato, Journal of Applied Physics Materials ScienceSi FilmsEngineeringCrystalline DefectsPressure Dependent	1987	97
Microstructure of silicon implanted with high dose oxygen ions C. Jaussaud, J. Stoëmenos, J. Margail, Applied Physics Letters Materials ScienceOxide HeterostructuresHeat TreatmentIon ImplantationEngineering	1985	92
Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors Constantinos T. Angelis, C.A. Dimitriadis, M Miyasaka, Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringPolysilicon FilmsEngineering	1999	84
<i>In situ</i> observation of nickel metal-induced lateral crystallization of amorphous silicon thin films Mitsutoshi Miyasaka, Kenji Makihira, Tanemasa Asano, Applied Physics Letters Materials ScienceMaterials EngineeringEpitaxial GrowthEngineeringCrystalline Defects	2002	81
Achievements and limitations in optimized GaAs films grown on Si by molecular-beam epitaxy A. Georgakilas, P. Panayotatos, J. Stoëmenos, Journal of Applied Physics EngineeringOptoelectronic DevicesSemiconductor DeviceGaas FilmGaas Growth	1992	80

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