Concepedia

Author

J.-D. Ganière

École Polytechnique Fédérale de Lausanne

Also Known As

Ganiere, J.-D., Ganiere, Jean, J D Ganière, J. -D. Ganière, J. D. .. Ganiere, J. D. GANIÈRE, J. D. Ganière, J.-D Ganiere, J.-D. Ganiere, J.-D. Ganière

75

Publications

1.6K

Citations

23

H-Index

45

Concepts

All Affiliations

École Polytechnique Fédérale de LausanneCentre National de la Recherche ScientifiqueUniversité de MontpellierInstitute of PhysicsAREA Science Park
JG

About

J.-D. Ganière is an author at École Polytechnique Fédérale de Lausanne specializing in engineering, applied physics, and physics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

21

31

1.4K

2

Applied Physics

20

30

1.3K

3

Electrical Engineering

6

6

269

4

Natural Sciences

3

3

202

5

Chemistry

2

2

95

J.-D. Ganière

×

34

Publications

1.5K

Citations

22

H-Index

YearCitations

Engineering the spatial confinement of exciton polaritons in semiconductors

R. Idrissi Kaitouni, Ounsi El Daïf, A. Baas,

Physical Review B

2006

176

Probing carrier dynamics in nanostructures by picosecond cathodoluminescence

Michele Merano, S. Sonderegger, A. Crottini,

Nature

2005

175

On the size dependence of the optical absorption due to small metal particles

J.-D. Ganière, R. Rechsteiner, M. A. Smithard

Solid State Communications

1975

88

High spatial resolution picosecond cathodoluminescence of InGaN quantum wells

S. Sonderegger, E. Feltin, Michele Merano,

Applied Physics Letters

2006

87

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Pierre Corfdir, Pierre Lefèbvre, Jacques Levrat,

Journal of Applied Physics

2009

74

Charged exciton dynamics in GaAs quantum wells

Gleb Finkelstein, V. Umansky, I. Bar‐Joseph,

Physical review. B, Condensed matter

1998

72

Fluorescence yield and lifetime of isolated polydiacetylene chains: Evidence for a one-dimensional exciton band in a conjugated polymer

R. Lécuiller, J. Berréhar, J.-D. Ganière,

Physical review. B, Condensed matter

2002

66

Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates

Pierre Corfdir, Pierre Lefèbvre, Jelena Ristić,

Journal of Applied Physics

2009

64

Role of point defects in the silicon diffusion in GaAs and Al0.3Ga0.7As and in the related superlattice disordering

Lorenzo Pavesi, Nguyen Hong Ky, J.-D. Ganière,

Journal of Applied Physics

1992

62

High-temperature Mott transition in wide-band-gap semiconductor quantum wells

Georg Rossbach, Jacques Levrat, Gwénolé Jacopin,

Physical Review B

2014

53

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