Applied Physics Letters · 2006 · 89 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDislocations In SemiconductorsQuantum ConfinementQuantum DotsQuantum WellsAtomic Force Microscopy AnalysisCarrier Transport In Quantum WellsCathodoluminescence MicroscopyContrastNonradiative RecombinationQuantum Well HeterostructuresQuantum Well Structures
The authors have studied InxGa1−xN∕GaN (x≈15%) quantum wells (QWs) using atomic force microscopy (AFM) and picosecond time resolved cathodoluminescence (pTRCL) measurements. They observed a contrast inversion between monochromatic CL maps corresponding to the high energy side (3.13eV) and the low energy side (3.07eV) of the QW luminescence peak. In perfect correlation with CL images, AFM images clearly show regions where the QW thickness almost decreases to zero. Pronounced spectral diffusion from high energy thinner regions to low energy thicker regions is observed in pTRCL, providing a possible explanation for the hindering of nonradiative recombination at dislocations.
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