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Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
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References
1997
Year
Wide-bandgap SemiconductorEngineeringPiezoelectric FieldSemiconductor NanostructuresNanoelectronicsQuantum MaterialsElectric FieldMaterials ScienceQuantum SciencePhotoluminescencePhysicsQuantum DeviceAluminum Gallium NitrideCategoryiii-v SemiconductorQuantum-confined Stark EffectApplied PhysicsCondensed Matter PhysicsPiezoelectric FieldsPhononGan Power DeviceMultilayer HeterostructuresOptoelectronics
We have studied the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells. Our calculation suggests that an electric field of 1.08 MV/cm is induced by the piezoelectric effect in strained Ga 0.87 In 0.13 N grown on GaN. The photoluminescence peak energy of the Ga 0.87 In 0.13 N strained quantum wells showed blue shift with increasing excitation intensity. Moreover, the well-width dependence of its luminescence peak energy was well explained when the piezoelectric fields were taken into account. These results clearly showed that the piezoelectric field induced the quantum-confined Stark effect.
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