Microstructure of silicon implanted with high dose oxygen ions

Abstract

Buried implanted oxide layers have been formed by high dose implantation of oxygen ions (3×1018 ions cm−2) into 〈100〉 silicon wafers, at a constant temperature of 500 °C. The implanted layers were studied by cross-sectional transmission electron microscopy and secondary ion mass spectroscopy. The defects at both the top Si/SiO2 and the SiO2/bulk Si interfaces are shown to be SiO2 precipitates. The precipitates are unstable and can be eliminated by heat treatment, and a homogeneous top silicon layer with a low density of dislocations can be obtained.