Applied Physics Letters · 1985 · 93 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSurface ScienceDislocations In SemiconductorsDopingIon ImplantationOxide SemiconductorsRadiation Damage In MaterialsSilicon MaterialsCross-sectional MicroscopyImplantation-induced Defect FormationPrecipitatesSecondary Ion Mass SpectrometrySiliconSilicon DefectsSilicon DioxideSilicon Wafers
Buried implanted oxide layers have been formed by high dose implantation of oxygen ions (3×1018 ions cm−2) into 〈100〉 silicon wafers, at a constant temperature of 500 °C. The implanted layers were studied by cross-sectional transmission electron microscopy and secondary ion mass spectroscopy. The defects at both the top Si/SiO2 and the SiO2/bulk Si interfaces are shown to be SiO2 precipitates. The precipitates are unstable and can be eliminated by heat treatment, and a homogeneous top silicon layer with a low density of dislocations can be obtained.
15
On diffraction contrast from inclusions
Michael F. Ashby, L. M. Brown · Philosophical magazine · 1963 · 329 citations
Natural Sciences, Materials Engineering, Materials Science +17