A. Sasikumar

Spatially-resolved spectroscopic measurements of <i>Ec</i> − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

D. W. Cardwell, A. Sasikumar, Aaron R. Arehart et al. · Applied Physics Letters · 2013 · 105 citations

Engineering, Electrical Engineering, Materials Science +17

Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Aaron R. Arehart, A. Sasikumar, Siddharth Rajan et al. · Solid-State Electronics · 2012 · 60 citations

Engineering, Electrical Engineering, Materials Science +13

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

A. Sasikumar, Aaron R. Arehart, Sara Martin-Horcajo et al. · Applied Physics Letters · 2013 · 54 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

Z. Zhang, D. W. Cardwell, A. Sasikumar et al. · Journal of Applied Physics · 2016 · 43 citations

Engineering, Electrical Engineering, Materials Engineering +17

Application reliability validation of GaN power devices

S.R. Bahl, Jungwoo Joh, Lixing Fu et al. · 2016 · 43 citations

Engineering, Electrical Engineering, Microelectronics +16