Publication | Closed Access
Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
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Citations
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References
2012
Year
Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorApplied PhysicsDirect ObservationAluminum Gallium NitrideGan Power DevicePower Electronics
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