Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

Gaudenzio Meneghesso, G. Verzellesi, Francesca Danesin et al. · IEEE Transactions on Device and Materials Reliability · 2008 · 642 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

Shreepad Karmalkar, Umesh K. Mishra · IEEE Transactions on Electron Devices · 2001 · 439 citations

Engineering, Electrical Engineering, Materials Science +17

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

U. Chowdhury, J. L. Jiménez, C. Lee et al. · IEEE Electron Device Letters · 2008 · 159 citations

Engineering, Electrical Engineering, Materials Science +16

Physical degradation of GaN HEMT devices under high drain bias reliability testing

S.Y. Park, Carlo Floresca, Uttiya Chowdhury et al. · Microelectronics Reliability · 2009 · 100 citations

Engineering, Electrical Engineering, Materials Science +16

Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors

Jungwoo Joh, Jesús A. del Alamo · 2008 · 67 citations

Engineering, Electrical Engineering, Materials Engineering +17