Yi Pei

Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method

Matteo Meneghini, N. Ronchi, Antonio Stocco et al. · IEEE Transactions on Electron Devices · 2011 · 167 citations

Semiconductors, Gan-based Hemts, Electrical Engineering +15

Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

M. Ťapajna, R. Simms, Yi Pei et al. · IEEE Electron Device Letters · 2010 · 144 citations

Wide-bandgap Semiconductor, Electrical Engineering, Identifying Location +14

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

Man Hoi Wong, Yi Pei, Tomás Palacios et al. · Applied Physics Letters · 2007 · 75 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs

R. Cuerdo, Yi Pei, Z. Chen et al. · IEEE Electron Device Letters · 2009 · 63 citations

Wide-bandgap Semiconductor, Cryogenic Temperatures, Engineering +18

Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Aaron R. Arehart, A. Sasikumar, Siddharth Rajan et al. · Solid-State Electronics · 2012 · 60 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6