Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method

Matteo Meneghini, N. Ronchi, Antonio Stocco, +4

IEEE Transactions on Electron Devices

SemiconductorsGan-based HemtsElectrical EngineeringElectronic DevicesGan Hemts +13

Reliability issues of Gallium Nitride High Electron Mobility Transistors

Gaudenzio Meneghesso, Matteo Meneghini, Augusto Tazzoli, +4

International Journal of Microwave and Wireless Technologies

Reliability IssuesWide-bandgap SemiconductorElectrical EngineeringEngineeringGan Hemts +11

Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

Tian‐Li Wu, Benoit Bakeroot, Hu Liang, +6

IEEE Electron Device Letters

Gate Capacitance CharacteristicsWide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronics +8

An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

Niels Posthuma, Shuzhen You, Steve Stoffels, +11

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringTrue E-mode Performance +9

Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance

Niels Posthuma, Shuzhen You, H. Liang, +5

Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsMg Active Concentration +10

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Jie Hu, Steve Stoffels, Silvia Lenci, +9

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorEngineeringPerformance Optimization200-Mm Silicon SubstrateElectronic Devices +14

Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics

M. Van Hove, Xuanwu Kang, Steve Stoffels, +5

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorAluminium NitrideEngineeringSemiconductor MaterialsGate Dielectric +15

Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors

Matteo Meneghini, Antonio Stocco, N. Ronchi, +4

Applied Physics Letters

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringLuminescence PropertiesEngineering +11

Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination

Jie Hu, Steve Stoffels, Silvia Lenci, +8

IEEE Transactions on Electron Devices

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringAnode RecessEngineering +10

Investigation of Imprint in FE-HfO₂ and Its Recovery

Y. Higashi, B. Kaczer, Anne S. Verhulst, +8

IEEE Transactions on Electron Devices

Magnetic PropertiesEngineeringMagnetic ResonanceFerroelectric Random-access MemoryChemistry +16