N. Ronchi

Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method

Matteo Meneghini, N. Ronchi, Antonio Stocco et al. · IEEE Transactions on Electron Devices · 2011 · 167 citations

Semiconductors, Gan-based Hemts, Electrical Engineering +15

Reliability issues of Gallium Nitride High Electron Mobility Transistors

Gaudenzio Meneghesso, Matteo Meneghini, Augusto Tazzoli et al. · International Journal of Microwave and Wireless Technologies · 2010 · 118 citations

Reliability Issues, Wide-bandgap Semiconductor, Electrical Engineering +13

Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

Tian‐Li Wu, Benoit Bakeroot, Hu Liang et al. · IEEE Electron Device Letters · 2017 · 112 citations

Gate Capacitance Characteristics, Wide-bandgap Semiconductor, Electrical Engineering +10

An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

Niels Posthuma, Shuzhen You, Steve Stoffels et al. · 2018 · 106 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance

Niels Posthuma, Shuzhen You, H. Liang et al. · 2016 · 87 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12