Concepedia

Author

Brian Poling

Wright-Patterson Air Force Base

Also Known As

B. Poling, B. S. Poling, B.S. Poling, Brian Poling, Brian S. Poling

20

Publications

305

Citations

10

H-Index

22

Concepts

All Affiliations

Wright-Patterson Air Force BaseUnited States Air Force Research LaboratoryWyle (United States)The Ohio State UniversityU.S. Air Force Institute of Technology
BP

About

Brian Poling is an author at Wright-Patterson Air Force Base specializing in electrical engineering, applied physics, and engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

10

10

245

2

Applied Physics

10

10

245

3

Electrical Engineering

10

10

245

4

Physics

3

3

63

5

Electronic Devices

2

2

59

Brian Poling

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11

Publications

273

Citations

10

H-Index

YearCitations

Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Aaron R. Arehart, A. Sasikumar, Siddharth Rajan,

Solid-State Electronics

2012

60

Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs

Aaron R. Arehart, A. Sasikumar, G. D. Via,

2010

41

Wafer‐scale GaN HEMT performance enhancement by diamond substrate integration

G. D. Via, Jonathan Felbinger, J. D. Blevins,

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

2014

35

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

Ahmad E. Islam, Nicholas P. Sepelak, Adam Miesle,

IEEE Transactions on Electron Devices

2024

28

Recent Progress in GaN-on-Diamond Device Technology

K. Sutherlin, Stephen E. Tetlak, Brian Poling,

2014

24

Worst-Case Bias for High Voltage, Elevated-Temperature Stress of AlGaN/GaN HEMTs

Pengfei Wang, Xun Li, En Xia Zhang,

IEEE Transactions on Device and Materials Reliability

2020

21

Reliability testing of AlGaN/GaN HEMTs under multiple stressors

Bradley D. Christiansen, Ronald A. Coutu, Eric R. Heller,

2011

17

Commercial-off-the-shelf algan/gan hemt device reliability study after exposure to heavy ion radiation

Brian Poling, G. D. Via, K.D. Bole,

Microelectronics Reliability

2016

14

Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN

Aaron R. Arehart, A. Sasikumar, G. D. Via,

Microelectronics Reliability

2015

12

Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing

Ronald A. Coutu, Robert A. Lake, Bradley D. Christiansen,

Electronics

2016

11

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