Brian Poling

Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Aaron R. Arehart, A. Sasikumar, Siddharth Rajan et al. · Solid-State Electronics · 2012 · 60 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6

Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs

Aaron R. Arehart, A. Sasikumar, G. D. Via et al. · 2010 · 41 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +12

Wafer‐scale GaN HEMT performance enhancement by diamond substrate integration

G. D. Via, Jonathan Felbinger, J. D. Blevins et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2014 · 35 citations · Full text

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +10

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

Ahmad E. Islam, Nicholas P. Sepelak, Adam Miesle et al. · IEEE Transactions on Electron Devices · 2024 · 28 citations

Recent Progress in GaN-on-Diamond Device Technology

K. Sutherlin, Stephen E. Tetlak, Brian Poling et al. · 2014 · 24 citations

Wide-bandgap Semiconductor, Engineering, Electronic Devices +16