2010 · 41 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesCarrier TransportDevice CharacterizationSemiconductor Device MaterialsSemiconductor PhysicsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsCharge Trapping AnalysisDeep-level DefectsGallium Nitride (Gan) MaterialsHigh-electron-mobility TransistorsMobility ExtractionSemiconductor CharacterizationTrap CharacterizationTrapping Effects
New constant drain-current deep level optical/transient spectroscopy (CI <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> -DLTS/DLOS) methods to quantify trap energies and concentrations in AlGaN/GaN high electron mobility transistors (HEMTs) are described. These methods are applied to RF stressed HEMTs to characterize the impact of stressing on traps and identified a significant increase in virtual gate related levels.
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Next generation defect characterization in nitride HEMTs
Aaron R. Arehart, Andrew Malonis, C. Poblenz et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 37 citations · Full text
Engineering, Electrical Engineering, Materials Engineering +17