Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs

Abstract

New constant drain-current deep level optical/transient spectroscopy (CI <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> -DLTS/DLOS) methods to quantify trap energies and concentrations in AlGaN/GaN high electron mobility transistors (HEMTs) are described. These methods are applied to RF stressed HEMTs to characterize the impact of stressing on traps and identified a significant increase in virtual gate related levels.