F. Recht

Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

F. Recht, L. McCarthy, Siddharth Rajan et al. · IEEE Electron Device Letters · 2006 · 86 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Aaron R. Arehart, A. Sasikumar, Siddharth Rajan et al. · Solid-State Electronics · 2012 · 60 citations

Engineering, Electrical Engineering, Materials Science +13

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

A. Sasikumar, Aaron R. Arehart, Sara Martin-Horcajo et al. · Applied Physics Letters · 2013 · 54 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

C. Poblenz, A. Corrion, F. Recht et al. · IEEE Electron Device Letters · 2007 · 32 citations

Engineering, Electrical Engineering, Materials Science +17

Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts

Yi Pei, F. Recht, N. Fichtenbaum et al. · Electronics Letters · 2007 · 16 citations

Engineering, Electrical Engineering, Materials Science +17