IEEE Electron Device Letters · 2006 · 86 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIii-v SemiconductorsIon ImplantationSemiconductor Device MaterialsSemiconductor InterfacesWide-bandgap Semiconductor DevicesActivation AnnealingContact ResistanceGallium Nitride (Gan) MaterialsGan-based High-frequency DevicesHigh-electron-mobility TransistorsMetal-organic Chemical Vapor DepositionOhmic ContactsPower Density
This letter reports AlGaN/GaN high-electron mobility transistors with capless activation annealing of implanted Si for nonalloyed ohmic contacts. Source and drain areas were implanted with an Si dose of 1/spl times/10/sup 16/ cm/sup -2/ and were activated at /spl sim/1260/spl deg/C in a metal-organic chemical vapor deposition system in ammonia and nitrogen at atmospheric pressure. Nonalloyed ohmic contacts to ion-implanted devices showed a contact resistance of 0.96 /spl Omega//spl middot/mm to the channel. An output power density of 5 W/mm was measured at 4 GHz, with 58% power-added efficiency and a gain of 11.7 dB at a drain bias of 30 V.
12
Ion-implanted GaN junction field effect transistor
J.C. Zolper, R. J. Shul, Albert G. Baca et al. · Applied Physics Letters · 1996 · 167 citations
Current instabilities in GaN-based devices
I. Daumiller, D. Théron, Christophe Gaquière et al. · IEEE Electron Device Letters · 2001 · 151 citations
Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts
Haijiang Yu, L. McCarthy, Siddharth Rajan et al. · IEEE Electron Device Letters · 2005 · 104 citations