Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts

Abstract

Silicon ions were implanted to source-drain regions to achieve a non-alloyed ohmic contact resistance as low as 0.2 Ω · mm. Based on this technology, T-shaped deep submicron HEMTs were fabricated. An extrinsic fT of 92 GHz and an extrinsic fmax of 148 GHz have been measured in a passivated 0.15×150 µm device. Power measurements at 10 GHZ showed 70.7% power-added-efficiency and 4.1 W/mm power density at 20 V drain bias.