P. Hashimoto

Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications

J.S. Moon, Shihchang Wu, D. Wong et al. · IEEE Electron Device Letters · 2005 · 130 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

GaN/AlGaN high electron mobility transistors withf _τ of 110 GHz

M. Micovic, Nam Nguyen, P. Janke et al. · Electronics Letters · 2000 · 111 citations

55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge

J. S. Moon, D. Wong, Ming Hu et al. · IEEE Electron Device Letters · 2008 · 107 citations

Wide-bandgap Semiconductor, Electrical Engineering, Peak Pae +10

High performance microwave power GaN/AlGaN MODFETsgrown by RF-assisted MBE

Nam Nguyen, M. Micovic, Wei-Ting Wong et al. · Electronics Letters · 2000 · 99 citations

92–96 GHz GaN power amplifiers

M. Micovic, A. Kurdoghlian, A. Margomenos et al. · 2012 · 95 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9