Electronics Letters · 2000 · 99 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesDevice CharacterizationDevice ScalingHigh-frequency Semiconductor DevicesWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsEpitaxial MaterialsGallium NitrideGallium Nitride Power DevicesHigh PerformanceMaximum OutputMaximum Power OutputMicrowave DevicesPower Output
High performance GaN/AlGaN MODFETs grown by MBE directly on SiC substrate have been successfully fabricated and characterised. The epitaxial layers of the device were grown by RF-assisted MBE. Excellent device uniformity, reproducibility and scalability were obtained. A maximum output density of 6.5 W/mm was obtained for a 0.1 mm device. On scaling to 1.0 mm gate-width, a total output power of 6.3 W with 38% PAE at 10 GHz was achieved. These device results demonstrate the excellent potential of GaN-based FETs as power cells for practical microwave applications.
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Microwave performance of AlGaN/GaN inverted MODFET's
Özgür Aktaş, Z. Fan, A. Botchkarev et al. · IEEE Electron Device Letters · 1997 · 105 citations
AlGaN-GaN heterostructure FETs with offset gatedesign
R. Gaška, Q. Chen, Jinwei Yang et al. · Electronics Letters · 1997 · 47 citations
Engineering, Electrical Engineering, Materials Engineering +17