P. Janke

GaN/AlGaN high electron mobility transistors withf _τ of 110 GHz

M. Micovic, Nam Nguyen, P. Janke et al. · Electronics Letters · 2000 · 112 citations

Engineering, Electrical Engineering, Materials Science +16

High performance microwave power GaN/AlGaN MODFETsgrown by RF-assisted MBE

Nam Nguyen, M. Micovic, Wei-Ting Wong et al. · Electronics Letters · 2000 · 99 citations

Engineering, Electrical Engineering, Materials Science +17

GaN/AlGaN HEMTs operating at 20 GHz withcontinuous-wave power density > 6 W/mm

Jeong‐Sun Moon, M. Micovic, P. Janke et al. · Electronics Letters · 2001 · 68 citations

Engineering, Electrical Engineering, Materials Science +17

Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation

Jeong‐Sun Moon, M. Micovic, A. Kurdoghlian et al. · IEEE Electron Device Letters · 2002 · 65 citations

Engineering, Electrical Engineering, Materials Science +16

AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy

M. Micovic, A. Kurdoghlian, P. Janke et al. · IEEE Transactions on Electron Devices · 2001 · 52 citations

Engineering, Electrical Engineering, Materials Science +17