IEEE Electron Device Letters · 2002 · 65 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesNoise In Semiconductor DevicesPower DissipationWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesBreakdown VoltageGallium Nitride (Gan) MaterialsGallium Nitride Microwave Integrated CircuitsGan-based High-frequency DevicesHigh-voltage BreakdownMicrowave Noise CharacterizationNoise Performance Analysis
We report low microwave noise performance of discrete AlGaN-GaN HEMTs at DC power dissipation comparable to that of GaAs-based low-noise FETs. At 1-V source-drain (SD) bias and DC power dissipation of 97 mW/mm, minimum noise figures (NF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> ) of 0.75 dB at 10 GHz and 1.5 dB at 20 GHz were achieved, respectively. A device breakdown voltage of 40 V was observed. Both the low microwave noise performance at small DC power level and high breakdown voltage was obtained with a shorter SD spacing of 1.5 μm in 0.15-μm gate length GaN HEMTs. By comparison, NF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> with 2 μm SD spacing was 0.2 dB greater at 10 GHz.
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Undoped AlGaN/GaN HEMTs for microwave power amplification
L.F. Eastman, V. Tilak, J. Smart et al. · IEEE Transactions on Electron Devices · 2001 · 389 citations
High Al-content AlGaN/GaN MODFETs for ultrahigh performance
Yifeng Wu, B.P. Keller, P. Fini et al. · IEEE Electron Device Letters · 1998 · 280 citations