IEEE Electron Device Letters · 2005 · 133 citations · 10 references
EngineeringElectrical EngineeringMaterials EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesPower Added EfficiencyPower DensityPower EfficiencyPower OutputSurface States
We report deep-submicrometer gate-recessed and field-plated AlGaN-GaN HEMTs and their state-of-the-art continuous wave (CW) power performance measured at 30 GHz. The AlGaN-GaN HEMTs exhibit a CW power density of 5.7 W/mm with a power-added efficiency (PAE) of 45% and drain-efficiency of 58% at V/sub ds/=20 V. At V/sub ds/=28 V, the output power density is measured as high as 6.9 W/mm with both PAE and output power increasing with input power level. Compared to conventional T-gated AlGaN-GaN HEMTs, the output power density and PAE of gate-recessed AlGaN-GaN HFETs are improved greatly, along with the excellent pulsed IVs. We attribute the improvement to both a field-plating effect and a vertical separation of the gate plane from surface states.
10
30-W/mm GaN HEMTs by Field Plate Optimization
Yifeng Wu, A. Saxler, M. Moore et al. · IEEE Electron Device Letters · 2004 · 1.1K citations
10-W/mm AlGaN-GaN HFET with a field modulating plate
Yuji Ando, Yasuhiro Okamoto, Hiroyuki Miyamoto et al. · IEEE Electron Device Letters · 2003 · 274 citations