M. Antcliffe

Ultra-low resistance ohmic contacts in graphene field effect transistors

Jeong‐Sun Moon, M. Antcliffe, Hwa-Chang Seo et al. · Applied Physics Letters · 2012 · 143 citations

Engineering, Electrical Engineering, Materials Science +16

Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications

J.S. Moon, Shihchang Wu, D. Wong et al. · IEEE Electron Device Letters · 2005 · 133 citations

Engineering, Electrical Engineering, Materials Engineering +17

55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge

J. S. Moon, D. Wong, Ming Hu et al. · IEEE Electron Device Letters · 2008 · 110 citations

Engineering, Electrical Engineering, Materials Science +17

GaN HFET for W-band Power Applications

M. Micovic, A. Kurdoghlian, P. Hashimoto et al. · 2006 · 93 citations

Engineering, Electrical Engineering, Materials Science +17

360 GHz f_MAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

Jeong‐Sun Moon, Joel Wong, Bob Grabar et al. · IEEE Electron Device Letters · 2020 · 82 citations

Engineering, Electrical Engineering, Materials Science +13