MBE growth of ALGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances - Concepedia

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MBE growth of ALGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances

DOI Full Paper Access

34

Citations

11

References

2003

Year

Y. Cordier, F. Sèmond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, Virginie Hoel, A. Minko, N. Vellas,

Journal of Crystal Growth

Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorMbe GrowthApplied PhysicsRf Small SignalAluminum Gallium NitrideGan Power DeviceAlgan/gan Hemts

References

	Year	Citations

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