A. Minko

Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

D. Ducatteau, A. Minko, Virginie Hoel et al. · IEEE Electron Device Letters · 2005 · 113 citations

Wide-bandgap Semiconductor, Electrical Engineering, Output Power Density +13

AlGaN–GaN HEMTs on Si With Power Density Performance of 1.9 W/mm at 10 GHz

A. Minko, Virginie Hoel, E. Morvan et al. · IEEE Electron Device Letters · 2004 · 48 citations

Wide-bandgap Semiconductor, Electrical Engineering, Output Power Density +9

High Microwave and Noise Performance of 0.17-<tex>$muhbox m$</tex>AlGaN–GaN HEMTs on High-Resistivity Silicon Substrates

A. Minko, Virginie Hoel, Sylvie Lépilliet et al. · IEEE Electron Device Letters · 2004 · 44 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

MBE growth of ALGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances

Y. Cordier, F. Sèmond, P. Lorenzini et al. · Journal of Crystal Growth · 2003 · 34 citations · Full text

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +8

Investigation of traps in AlGaN/GaN HEMTs by current transient spectroscopy

M. Gassoumi, Jean‐Marie Bluet, F. Chekir et al. · Materials Science and Engineering C · 2005 · 24 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +5