Investigation of traps in AlGaN/GaN HEMTs by current transient spectroscopy

Very-high power density AlGaN/GaN HEMTs

Yifeng Wu, D. Kapolnek, J. P. Ibbetson et al. · IEEE Transactions on Electron Devices · 2001 · 549 citations

Electrical Engineering, Engineering, Rf Semiconductor +12

Analysis of deep levels in <i>n</i>-type GaN by transient capacitance methods

Peter Hacke, Theeradetch Detchprohm, K. Hiramatsu et al. · Journal of Applied Physics · 1994 · 287 citations

Semiconductors, Deep-level Transient Spectroscopy, Electrical Engineering +11

Deep level defects in <i>n</i>-type GaN

Werner Götz, N. M. Johnson, Hiroshi Amano et al. · Applied Physics Letters · 1994 · 188 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Deep-level defects and <i>n</i>-type-carrier concentration in nitrogen implanted GaN

D. Haase, M. Schmid, W. Kürner et al. · Applied Physics Letters · 1996 · 154 citations

Materials Science, Semiconductor Technology, Electrical Engineering +10

Deep levels in the upper band-gap region of lightly Mg-doped GaN

Peter Hacke, H. Nakayama, Theeradetch Detchprohm et al. · Applied Physics Letters · 1996 · 136 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13