Concepedia

Trapping Effects

Trapping Effects is a physical phenomenon in wide-bandgap semiconductor devices characterized by the temporary capture and subsequent release of charge carriers by defect states within the bandgap, leading to dynamic performance degradation such as current dispersion, threshold voltage shift, and reduced device reliability.

1.4K

Publications

58.9K

Citations

4.7K

Authors

974

Institutions

Publications per year

2017–2026

229

Parents

Publications

1.4K

Diffusion by a Random Velocity Field

Robert H. Kraichnan · The Physics of Fluids · 1970 · 1K citations

, , +12

Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices

Kjell Jeppson, Christer Svensson · Journal of Applied Physics · 1977 · 678 citations · Full text

, , +14

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

S.C. Binari, K. Ikossi, J.A. Roussos et al. · IEEE Transactions on Electron Devices · 2001 · 638 citations · Full text

, , +17

Scattering of electrons at threading dislocations in GaN

Nils Weimann, L.F. Eastman, D. Doppalapudi et al. · Journal of Applied Physics · 1998 · 615 citations

, , +17

Interaction of Normal Modes with Electron Traps

Jordan J. Markham · Reviews of Modern Physics · 1959 · 473 citations

, , +11

1–5 of 1.4K

Authors

4.7K

  1. GM
    Gaudenzio Meneghesso

    University of Padua, Italy

    41 publications · 2.2K citations

    25

    h-index

  2. EZ
    Enrico Zanoni

    University of Padua, Italy

    37 publications · 1.9K citations

    24

    h-index

  3. MM
    Matteo Meneghini

    University of Padua, Italy

    37 publications · 1.9K citations

    23

    h-index

  4. SM
    Souvik Mahapatra

    Indian Institute of Technology Bombay, India

    20 publications · 1.2K citations

    17

    h-index

  5. GG
    G. Groeseneken

    IMEC, Belgium

    22 publications · 850 citations

    16

    h-index

1–5 of 4.7K

Institutions

974

  1. IMEC

    Leuven, Belgium

    30 h-index

    291 publications

    10.4K citations

  2. University of Padua

    Padua, Italy

    25 h-index

    201 publications

    9.4K citations

  3. Centre National de la Recherche Scientifique

    Paris, France

    22 h-index

    147 publications

    7.2K citations

  4. Indian Institute of Technology Bombay

    Mumbai, India

    20 h-index

    86 publications

    4.8K citations

  5. KU Leuven

    Leuven, Belgium

    18 h-index

    80 publications

    2.9K citations

  6. IBM (United States)

    Armonk, United States

    17 h-index

    38 publications

    1.9K citations

  7. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    17 h-index

    90 publications

    2.3K citations

  8. United States Naval Research Laboratory

    Washington, United States

    16 h-index

    75 publications

    9.8K citations

1–8 of 974

Venues

  1. IEEE Transactions on Electron Devices

    169 publications · 8.8K citations

    51

    h-index

  2. Applied Physics Letters

    122 publications · 5.5K citations

    40

    h-index

  3. Journal of Applied Physics

    124 publications · 6.9K citations

    39

    h-index

  4. IEEE Electron Device Letters

    80 publications · 3.5K citations

    36

    h-index

  5. Physical review. B, Condensed matter

    PRB · 29 publications · 1.4K citations

    22

    h-index

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