P. Lorenzini

Yellow luminescence and related deep states in undoped GaN

E. Calleja, F.J. Sánchez, Durga Basak et al. · Physical review. B, Condensed matter · 1997 · 213 citations

Natural Sciences, Materials Engineering, Materials Science +16

High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

Éric Frayssinet, W. Knap, P. Lorenzini et al. · Applied Physics Letters · 2000 · 133 citations · Full text

Natural Sciences, Materials Science, Physics +16

High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy

F. Sèmond, P. Lorenzini, N. Grandjean et al. · Applied Physics Letters · 2001 · 130 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire

M. Leroux, B. Beaumont, N. Grandjean et al. · Materials Science and Engineering B · 1997 · 108 citations · Full text

Engineering, Materials Engineering, Materials Science +14

Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111)

H. Lahrèche, P. Vennéguès, O. Tottereau et al. · Journal of Crystal Growth · 2000 · 102 citations

Engineering, Materials Engineering, Materials Science +14