Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111)

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher, J. Smart, J. R. Shealy et al. · Journal of Applied Physics · 1999 · 2.9K citations

Engineering, Materials Engineering, Materials Science +17

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

B. Heying, Xuemei Wu, S. Keller et al. · Applied Physics Letters · 1996 · 829 citations

Natural Sciences, Materials Engineering, Materials Science +17

High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

S.T. Sheppard, K. Doverspike, W.L. Pribble et al. · IEEE Electron Device Letters · 1999 · 538 citations

Engineering, Electrical Engineering, Materials Science +17

Dislocation Scattering in GaN

D. C. Look, J. R. Sizelove · Physical Review Letters · 1999 · 458 citations

Engineering, Materials Science, Physics +16

The role of dislocation scattering in <i>n</i>-type GaN films

H. M. Ng, D. Doppalapudi, T. D. Moustakas et al. · Applied Physics Letters · 1998 · 437 citations

Engineering, Materials Engineering, Materials Science +17