H. Lahrèche

Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

E. Feltin, B. Beaumont, M. Laügt et al. · Applied Physics Letters · 2001 · 270 citations

Materials Science, Semiconductors, Electrical Engineering +13

Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth

H. Lahrèche, P. Vennéguès, B. Beaumont et al. · Journal of Crystal Growth · 1999 · 117 citations

Materials Science, Materials Engineering, Epitaxial Growth +7

Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

D. Ducatteau, A. Minko, Virginie Hoel et al. · IEEE Electron Device Letters · 2005 · 113 citations

Wide-bandgap Semiconductor, Electrical Engineering, Output Power Density +13

Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111)

H. Lahrèche, P. Vennéguès, O. Tottereau et al. · Journal of Crystal Growth · 2000 · 102 citations

Materials Science, Materials Engineering, Aluminium Nitride +6

Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy

H. Lahrèche, M. Leroux, M. Laügt et al. · Journal of Applied Physics · 2000 · 83 citations

Materials Engineering, Materials Science, Electrical Engineering +12