IEEE Electron Device Letters · 2005 · 114 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsCurrent DensityGan-based High-frequency DevicesHigh-electron-mobility TransistorsMicrowave DevicesPower DensityPower GainPower OutputSilicon
Microwave frequency capabilities of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon (111) substrate for power applications are demonstrated in this letter. A maximum dc current density of 1 A/mm and an extrinsic current gain cutoff frequency (F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) of 50 GHz are achieved for a 0.25 μm gate length device. Pulsed and large signal measurements show the good quality of the epilayer and the device processing. The trapping phenomena are minimized and consequently an output power density of 5.1 W/mm is reached at 18 GHz on a 2×50×0.25 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> HEMT with a power gain of 9.1dB.
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AlGaN/GaN HEMTs on Si substrate with 7 W/mm output power density at 10 GHz
D.C. Dumka, C. Lee, H.Q. Tserng et al. · Electronics Letters · 2004 · 76 citations