B. Grimbert

Punch-through in short-channel AlGaN/GaN HFETs

Michael J. Uren, K. J. Nash, R.S. Balmer et al. · IEEE Transactions on Electron Devices · 2006 · 220 citations

Engineering, Electrical Engineering, Materials Science +15

Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

D. Ducatteau, A. Minko, Virginie Hoel et al. · IEEE Electron Device Letters · 2005 · 114 citations

Engineering, Electrical Engineering, Materials Science +17

First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz

Farid Medjdoub, Malek Zegaoui, B. Grimbert et al. · IEEE Electron Device Letters · 2012 · 82 citations

Engineering, Electrical Engineering, Materials Science +17

Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Paul Sangaré, Guillaume Ducournau, B. Grimbert et al. · Journal of Applied Physics · 2013 · 71 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors

Farid Medjdoub, Malek Zegaoui, B. Grimbert et al. · Applied Physics Express · 2011 · 70 citations

Engineering, Electrical Engineering, Materials Science +17