IEEE Electron Device Letters · 2012 · 82 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesDevice ScalingHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesSemiconductor HeterostructuresSemiconductor PhysicsWide-bandgap SemiconductorsCurrent DensityDouble Heterostructure DevicesGan-based High-frequency DevicesHeterostructure DevicesHeterostructure TransistorsHigh-electron-mobility TransistorsHigh-frequency PerformanceMicrowave Transistors
In this letter, high-output-power-density GaN-based high-electron-mobility transistors grown on a 100-mm silicon substrate is demonstrated for the first time at 40 GHz. The use of an optimized double heterostructure based on ultrathin barrier AlN/GaN allows both high current density and low leakage current, resulting in high-frequency performance (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> close to 200 GHz). Furthermore, the control of the trapping effects on these highly scaled devices enabled to set a first benchmark at 40 GHz with 2.5 W/mm at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> = 15 V, mainly limited by RF losses and thermal issues. These results show that an AlN/GaN/AlGaN heterostructure grown on silicon substrate is a viable technology for cost-effective high-power millimeter-wave amplifiers fully compatible with standard Si-based devices.
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