Nathalie Rolland

First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz

Farid Medjdoub, Malek Zegaoui, B. Grimbert et al. · IEEE Electron Device Letters · 2012 · 79 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Silicon‐Microtube Scaffold Decorated with Anatase TiO₂ as a Negative Electrode for a 3D Litium‐Ion Microbattery

Étienne Eustache, Pascal Tilmant, Laurence Morgenroth et al. · Advanced Energy Materials · 2014 · 77 citations

Negative Electrode, Engineering, Biomedical Engineering +20

High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate

Farid Medjdoub, Malek Zegaoui, D. Ducatteau et al. · IEEE Electron Device Letters · 2011 · 74 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors

Farid Medjdoub, Malek Zegaoui, B. Grimbert et al. · Applied Physics Express · 2011 · 69 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

A 60 GHz Power Amplifier With 14.5 dBm Saturation Power and 25% Peak PAE in CMOS 65 nm SOI

Alexandre Siligaris, Yasuhiro Hamada, C. Mounet et al. · IEEE Journal of Solid-State Circuits · 2010 · 67 citations

Electrical Engineering, Dbm Saturation Power, Engineering +11