C. Mounet

A 65-nm CMOS Fully Integrated Transceiver Module for 60-GHz Wireless HD Applications

Alexandre Siligaris, Olivier Richard, Baudouin Martineau et al. · IEEE Journal of Solid-State Circuits · 2011 · 176 citations

Engineering, Radio Frequency, High-frequency Device +8

A 60 GHz Power Amplifier With 14.5 dBm Saturation Power and 25% Peak PAE in CMOS 65 nm SOI

Alexandre Siligaris, Yasuhiro Hamada, C. Mounet et al. · IEEE Journal of Solid-State Circuits · 2010 · 67 citations

Electrical Engineering, Dbm Saturation Power, Engineering +11

Dual-channel CMOS co-integration with Si NFET and strained-SiGe PFET in nanowire device architecture featuring sub-15nm gate length

P. Nguyen, Sylvain Barraud, C. Tabone et al. · 2014 · 28 citations

Semiconductor Technology, Csige Channel, Electrical Engineering +14

16kbit HfO₂:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility

T. François, J. Coignus, Adam Makosiej et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 28 citations · Full text

Low-power Electronics, Electrical Engineering, Engineering +14

CPW and discontinuities modeling for circuit design up to 110 GHz in SOI CMOS technology.

Alexandre Siligaris, C. Mounet, Bruno Reig et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 2007 · 23 citations

New Modeling Method, Electrical Engineering, Physical Design (Electronics) +15