P. Nguyen

Comparative full-band Monte Carlo study of Si and Ge with screened pseudopotential-based phonon scattering rates

P. Nguyen, Karl Hofmann, G. Paasch · Journal of Applied Physics · 2003 · 52 citations

Natural Sciences, Materials Science, Physics +17

First demonstration of strained SiGe nanowires TFETs with ION beyond 700µA/µm

A. Villalon, C. Le Royer, P. Nguyen et al. · 2014 · 36 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

Comparison of platelet formation in hydrogen and helium-implanted silicon

X. Hebras, P. Nguyen, K.K. Bourdelle et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2007 · 30 citations

Natural Sciences, Materials Engineering, Materials Science +11

Dual-channel CMOS co-integration with Si NFET and strained-SiGe PFET in nanowire device architecture featuring sub-15nm gate length

P. Nguyen, Sylvain Barraud, C. Tabone et al. · 2014 · 29 citations

Engineering, Electrical Engineering, Materials Science +16

Mechanism of the Smart Cut™ layer transfer in silicon by hydrogen and helium coimplantation in the medium dose range

P. Nguyen, Ian Cayrefourcq, K.K. Bourdelle et al. · Journal of Applied Physics · 2005 · 29 citations

Engineering, Materials Engineering, Materials Science +17